KTA1273 transistor (pnp) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : -2 a collector-base voltage v (br)cbo : -30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic=-1ma, i e =0 -30 v collector-emitter breakdown voltage v(br) ceo i c = -10ma, i b =0 -30 v emitter-base breakdown voltage v(br) ebo i e = -1ma, i c =0 -5 v collector cut-off current i cbo v cb =-30v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a dc current gain h fe v ce = -2v, i c =-500ma 100 320 collector-emitter saturation voltage v ce (sat) i c =-1.5a, i b =-30ma -2.0 v base-emitter voltage v be v ce = -2v, i c = -500ma -1.0 v transition frequency f t v ce = -2v, i c = -500ma 80 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mh z 48 pf classification of h fe(1) rank o y range 100-200 160-320 1 2 3 to-92l 1. emitter 2. collector 3. base KTA1273 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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